Samsung Mobile PhoneSurface acoustic wave device and method for making same and mobile phone having sameWhat is claimed is: 1. A surface acoustic wave (SAW) device comprising: a silicon substrate; a piezoelectric layer formed on the silicon substrate, the thickness of the piezoelectric layer being configured to be in the range from about 0.05 .mu.m to about 2 .mu.m, the grain size of the piezoelectric layer being configured to be in the approximate range from 1 nm to 50 nm; and two comb-shaped electrodes formed on the piezoelectric layer, the electrodes each having a plurality of comb-shaped teeth with the comb-shaped teeth being interleaved with one another. 2. The SAW device as claimed in claim 1, wherein the piezoelectric layer is made from ZnOx. 3. The SAW device as claimed in claim 2, wherein the thickness of the piezoelectric layer is configured to be in the range from about 1.5 .mu.m-2 .mu.m and the grain size of the piezoelectric layer is configured to be in the range from about 20 nm to about 50 nm. 4. The SAW device as claimed in claim 2, wherein the thickness of the piezoelectric layer is configured to be in the range from about 0.7 .mu.m-1 .mu.m and the grain size of the piezoelectric layer is configured to be in the range from about 10 nm to 20 nm. 5. The SAW device as claimed in claim 2, wherein the thickness of the piezoelectric layer is configured to be in the range from about 0.4 .mu.m-0.6 .mu.m and the grain size of the piezoelectric layer is configured to be in the range from about 5 nm to about 10 nm. 6. The SAW device as claimed in claim 2, wherein the thickness of the piezoelectric layer is configured to be in the range from about 0.2 .mu.m-0.3 .mu.m and the grain size of the piezoelectric layer is configured to be in the range from about 3 nm to about 5 nm. 7. The SAW device as claimed in claim 2, wherein the thickness of the piezoelectric layer is configured to be in the range from about 0.1 .mu.m-0.2 .mu.m and the grain size of the piezoelectric layer is configured to be in the range from about 2 nm to about 3 nm. 8. The SAW device as claimed in claim 2, wherein the thickness of the piezoelectric layer is configured to be in the range from about 0.05 .mu.m-0.08 .mu.m and the grain size of the piezoelectric layer is configured to be in the range from about 1 nm to about 2 nm. 9. The SAW device as claimed in claim 1, wherein the piezoelectric layer is made from LiTaOx. 10. The SAW device as claimed in claim 1, wherein the piezoelectric layer is made from LiTiOx. Device for connecting ear-microphone to mobile
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